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? 2003 microchip technology inc. ds21826a-page 1 m mcp1700 features ? 1.6 a typical quiescent current ? input operating voltage range: 2.3v to 6.0v ? output voltage range: 1.2v to 5.0v ? 250 ma output current for output voltages 2.5v ? 200 ma output current for output voltages < 2.5v ? low dropout (ldo) voltage - 178 mv typical @ 250 ma for v out = 2.8v ? 0.4% typical output voltage tolerance ? standard output voltage options: - 1.2v, 1.8v, 2.5v, 3.0v, 3.3v, 5.0v ? stable with 1.0 f ceramic output capacitor ? short-circuit protection ? overtemperature protection applications ? battery-powered devices ? battery-powered alarm circuits ?smoke detectors ?co 2 detectors ? pagers and cellular phones ? smart battery packs ? low quiescent current voltage reference ?pdas ? digital cameras ? microcontroller power related literature ? an765, ?using microchip?s micropower ldos?, ds00765, microchip technology inc., 2002 ? an766, ?pin-compatible cmos upgrades to bipolar ldos?, ds00766, microchip technology inc., 2002 ? an792, ?a method to determine how much power a sot23 can dissipate in an application?, ds00792, microchip technology inc., 2001 description the mcp1700 is a family of cmos low dropout (ldo) voltage regulators that can deliver up to 250 ma of current while consuming only 1.6 a of quiescent current (typical). the input operating range is specified from 2.3v to 6.0v, making it an ideal choice for two and three primary cell battery-powered applications, as well as single cell li-ion-powered applications. the mcp1700 is capable of delivering 250 ma with only 178 mv of input to output voltage differential (v out = 2.8v). the output voltage tolerance of the mcp1700 is typically 0.4% at +25c and 3% maximum over the operating junction temperature range of -40c to +125c. output voltages available for the mcp1700 range from 1.2v to 5.0v. the ldo output is stable when using only 1 f output capacitance. ceramic, tantalum or aluminum electrolytic capacitors can all be used for input and output. overcurrent limit and overtemperature shutdown provide a robust solution for any application. package options include the sot23, sot89-3 and to92. package types 1 3 2 v in gnd v out mcp1700 1 2 3 v in gnd v out mcp1700 3-pin sot23-a 3-pin sot-89 3 2 1 gnd v in v out mcp1700 3-pin to-92 v in low quiescent current ldo
mcp1700 ds21826a-page 2 ? 2003 microchip technology inc. functional block diagrams typical application circuits + - mcp1700 v in v out gnd +v in error amplifier voltage reference over current over temperature mcp1700 gnd v out v in c in 1f ceramic c out 1f ceramic v out v in (2.3v to 3.2v) 1.8v i out 150 ma
? 2003 microchip technology inc. ds21826a-page 3 mcp1700 1.0 electrical characteristics absolute maximum ratings ? v dd ............................................................................................ + 6.5v all inputs and outputs w.r.t. .............(v ss -0.3v) to (v in +0.3v) peak output current .................................... internally limited storage temperature .....................................-65c to +150c maximum junction temperature ................................... 150c operating junction temperature...................-40c to +125c esd protection on all pins (hbm;mm) ............... 4kv; 400v ? notice: stresses above those listed under ?maximum rat- ings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. expo- sure to maximum rating conditions for extended periods may affect device reliability. dc characteristics electrical characteristics: unless otherwise specified, all limits are established for v in = v r + 1, i load = 100 a, c out = 1 f (x5r), c in = 1 f (x5r), t a = +25c. boldface type applies for junction temperatures, t j (note 6) of -40c to +125c. parameters sym min typ max units conditions input / output characteristics input operating voltage v in 2.3 ? 6.0 v note 1 input quiescent current i q ?1.6 4 a i l = 0 ma, v in = v r +1v maximum output current i out_ma 250 200 ? ? ? ? ma for v r 2.5v for v r < 2.5v output short circuit current i out_sc ?408 ? mav in = v r +1v, v out = gnd, current (peak current) measured 10 ms after short is applied. output voltage regulation v out v r -3.0% v r -2.0% v r 0.4 % v r +3.0% v r +2.0% v note 2 v out temperature coefficient tcv out ?50 ?ppm/c note 3 line regulation ? v out / (v out x ? v in ) -1.0 0.75 +1.0 %/v (v r +1)v v in 6v load regulation ? v out /v out -1.5 1.0 +1.5 %i l = 0.1 ma to 250 ma for v r 2.5v i l = 0.1 ma to 200 ma for v r < 2.5v note 4 dropout voltage v r > 2.5v v in -v out ?178 350 mv i l = 250 ma, (note 1, note 5) dropout voltage v r < 2.5v v in -v out ?150 350 mv i l = 200 ma, (note 1, note 5) output rise time t r ? 500 ? s 10% v r to 90% v r v in = 0v to 6v, r l = 50 ? resistive note 1: the minimum v in must meet two conditions: v in 2.3v and v in ( v r + 3.0% ) + v dropout . 2: v r is the nominal regulator output voltage. for example: v r = 1.2v, 1.5v, 1.8v, 2.5v, 2.8v, 3.0v, 3.3v, 4.0v, 5.0v. the input voltage (v in = v r + 1.0v); i out = 100 a. 3: tcv out = (v out-high - v out-low ) *10 6 / (v r * ? temperature), v out-high = highest voltage measured over the temperature range. v out-low = lowest voltage measured over the temperature range. 4: load regulation is measured at a constant junction temperature using low duty cycle pulse testing. changes in output voltage due to heating effects are determined using thermal regulation specification tcv out . 5: dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with a v r + 1v differential applied. 6: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., t a , t j , ja ). exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150c rating. sustained junction temperatures above 150c can impact the device reliability. 7: the junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. the test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant.
mcp1700 ds21826a-page 4 ? 2003 microchip technology inc. temperature specifications output noise e n ?3 ?v/(hz) 1/2 i l = 100 ma, f = 1 khz, c out = 1 f power supply ripple rejection ratio psrr ? 44 ? db f = 100 hz, c out = 1 f, i l = 50 ma, v inac = 100 mv pk-pk, c in = 0 f, v r =1.2v thermal shutdown protection t sd ?140 ? cv in = v r + 1, i l = 100 a electrical characteristics: unless otherwise specified, all limits are established for v in = v r + 1, i load = 100 a, c out = 1 f (x5r), c in = 1 f (x5r), t a = +25c. boldface type applies for junction temperatures, t j (note 1) of -40c to +125c. parameters sym min typ max units conditions temperature ranges specified temperature range t a -40 +125 c operating temperature range t a -40 +125 c storage temperature range t a -65 +150 c thermal package resistance thermal resistance, sot23-a ja ?335?c/w minimum trace width single layer board ? 230 ? c/w typical fr4 4-layer application thermal resistance, sot89 ja ? 52 ? c/w typical, 1 square inch of copper thermal resistance, to-92 ja ?131.9?c/w eia/jedec jesd51-751-7 4-layer board note 1: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., t a , t j , ja ). exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150c rating. sustained junction temperatures above 150c can impact the device reliability. dc characteristics (continued) electrical characteristics: unless otherwise specified, all limits are established for v in = v r + 1, i load = 100 a, c out = 1 f (x5r), c in = 1 f (x5r), t a = +25c. boldface type applies for junction temperatures, t j (note 6) of -40c to +125c. parameters sym min typ max units conditions note 1: the minimum v in must meet two conditions: v in 2.3v and v in ( v r + 3.0% ) + v dropout . 2: v r is the nominal regulator output voltage. for example: v r = 1.2v, 1.5v, 1.8v, 2.5v, 2.8v, 3.0v, 3.3v, 4.0v, 5.0v. the input voltage (v in = v r + 1.0v); i out = 100 a. 3: tcv out = (v out-high - v out-low ) *10 6 / (v r * ? temperature), v out-high = highest voltage measured over the temperature range. v out-low = lowest voltage measured over the temperature range. 4: load regulation is measured at a constant junction temperature using low duty cycle pulse testing. changes in output voltage due to heating effects are determined using thermal regulation specification tcv out . 5: dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with a v r + 1v differential applied. 6: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., t a , t j , ja ). exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150c rating. sustained junction temperatures above 150c can impact the device reliability. 7: the junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. the test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant.
? 2003 microchip technology inc. ds21826a-page 5 mcp1700 2.0 typical performance curves note: unless otherwise indicated: v r = 1.8v, c out = 1 f ceramic (x5r), c in = 1 f ceramic (x5r), i l = 100 a, t a = +25c, v in = v r +1v. note: junction temperature (t j ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction temperature. the test time is small enough such that the rise in junction temperature over the ambient temperature is not signi ficant. figure 2-1: input quiescent current vs. input voltage. figure 2-2: ground current vs. load current. figure 2-3: quiescent current vs. junction temperature. figure 2-4: output voltage vs. input voltage (v r = 1.2v). figure 2-5: output voltage vs. input voltage (v r = 1.8v). figure 2-6: output voltage vs. input voltage (v r = 2.8v). note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 input voltage (v) quiescent current (a) t j = - 40c t j = +25c t j = +125c v r = 1.2v i out = 0 a 0 5 10 15 20 25 30 35 40 45 50 0 25 50 75 100 125 150 175 200 225 250 load current (ma) ground current (a) v r = 2.8v t j = - 40c t j = +25c t j = +125c 1.25 1.50 1.75 2.00 2.25 2.50 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) quiscent current (a) v r = 5.0v v r = 2.8v v r = 1.2v v in = v r + 1v i out = 0 a 1.190 1.192 1.194 1.196 1.198 1.200 1.202 1.204 1.206 2 2.5 3 3.5 4 4.5 5 5.5 6 input voltage (v) output voltage (v) t j = - 40c t j = +25c t j = +125c v r = 1.2v i out = 0.1 ma 1.77 1.775 1.78 1.785 1.79 1.795 1.8 2 2.5 3 3.5 4 4.5 5 5.5 6 input voltage (v) output voltage (v) t j = - 40c t j = +25c t j = +125c v r = 1.8v i out = 0.1 ma 2.778 2.780 2.782 2.784 2.786 2.788 2.790 2.792 2.794 2.796 2.798 2.800 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6 input voltage (v) output voltage (v) t j = - 40c t j = +25c t j = +125c v r = 2.8v i out = 0.1 ma
mcp1700 ds21826a-page 6 ? 2003 microchip technology inc. note: unless otherwise indicated: v r = 1.8v, c out = 1 f ceramic (x5r), c in = 1 f ceramic (x5r), i l = 100 a, t a = +25c, v in = v r +1v. figure 2-7: output voltage vs. input voltage (v r = 5.0v). figure 2-8: output voltage vs. load current (v r = 1.2v). figure 2-9: output voltage vs. load current (v r = 1.8v). figure 2-10: output voltage vs. load current (v r = 2.8v). figure 2-11: output voltage vs. load current (v r = 5.0v). figure 2-12: dropout voltage vs. load current (v r = 2.8v). 4.955 4.960 4.965 4.970 4.975 4.980 4.985 4.990 4.995 5.000 5 5.2 5.4 5.6 5.8 6 input voltage (v) output voltage (v) t j = - 40c t j = +25c t j = +125c v r = 5.0v i out = 0.1 ma 1.15 1.16 1.17 1.18 1.19 1.20 1.21 0 25 50 75 100 125 150 175 200 load curent (ma) output voltage (v) t j = - 40c t j = +25c t j = +125c v r = 1.2v v in = v r + 1v 1.778 1.780 1.782 1.784 1.786 1.788 1.790 1.792 0 25 50 75 100 125 150 175 200 load current (ma) output voltage (v) t j = - 40c t j = +25c t j = +125c v r = 1.8v v in = v r + 1v 2.778 2.780 2.782 2.784 2.786 2.788 2.790 2.792 2.794 2.796 2.798 0 50 100 150 200 250 load current (ma) output voltage (v) t j = - 40c t j = +25c t j = +125c v r = 2.8v v in = v r + 1v 4.955 4.960 4.965 4.970 4.975 4.980 4.985 4.990 4.995 5.000 0 50 100 150 200 250 load current (ma) output voltage (v) t j = - 40c t j = +25c t j = +125c v r = 5.0v v in = v r + 1v 0 0.05 0.1 0.15 0.2 0.25 0 25 50 75 100 125 150 175 200 225 250 load current (ma) dropout votage (v) t j = - 40c t j = +25c t j = +125c v r = 2.8 v
? 2003 microchip technology inc. ds21826a-page 7 mcp1700 note: unless otherwise indicated: v r = 1.8v, c out = 1 f ceramic (x5r), c in = 1 f ceramic (x5r), i l = 100 a, t a = +25c, v in = v r +1v. figure 2-13: dropout voltage vs. load current (v r = 5.0v). figure 2-14: power supply ripple rejection vs. frequency (v r = 1.2v). figure 2-15: power supply ripple rejection vs. frequency (v r = 2.8v). figure 2-16: noise vs. frequency. figure 2-17: dynamic load step (v r =1.2v). figure 2-18: dynamic load step (v r =1.8v). 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0 25 50 75 100 125 150 175 200 225 250 load current (ma) dropout voltage (v) t j = - 40c t j = +25c t j = +125c v r = 5.0 v 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 frequency (khz) noise (mv/ hz) v in =2.5v v r =1.2v i out = 50ma v in =2.8v v r =1.8v i out = 50ma v in =3.8v v r =2.8v i out = 50ma
mcp1700 ds21826a-page 8 ? 2003 microchip technology inc. note: unless otherwise indicated: v r = 1.8v, c out = 1 f ceramic (x5r), c in = 1 f ceramic (x5r), i l = 100 a, t a = +25c, v in = v r +1v. figure 2-19: dynamic load step (v r =2.8v) . figure 2-20: dynamic load step (v r =1.8v) . figure 2-21: dynamic load step (v r =2.8v) . figure 2-22: dynamic load step (v r =5.0v) . figure 2-23: dynamic line step (v r =2.8v) . figure 2-24: startup from v in (v r =1.2v).
? 2003 microchip technology inc. ds21826a-page 9 mcp1700 note: unless otherwise indicated: v r = 1.8v, c out = 1 f ceramic (x5r), c in = 1 f ceramic (x5r), i l = 100 a, t a = +25c, v in = v r +1v. figure 2-25: start-up from v in (v r =1.8v). figure 2-26: start-up from v in (v r =2.8v). figure 2-27: load regulation vs. junction temperature (v r = 1.8v). figure 2-28: load regulation vs. junction temperature (v r = 2.8v). figure 2-29: load regulation vs. junction temperature (v r = 5.0v). figure 2-30: line regulation vs. temperature (v r = 1.2v, 1.8v, 2.8v). -0.4 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) load regulation (%) v r = 1.8v i out = 0 to 200 ma v in = 2.2v v in = 5.0v v in = 3.5v -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) load regulation (%) v r = 2.8v i out = 0 to 250 ma v in = 5.0v v in = 4.3v v in = 3.3v -0.2 -0.15 -0.1 -0.05 0 0.05 0.1 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) load regulation (%) v r = 5.0v i out = 0 to 250 ma v in = 5.5v v in = 6.0v -0.3 -0.25 -0.2 -0.15 -0.1 -0.05 0 0.05 0.1 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) line regulation (%/v) v r = 1.8v v r = 1.2v v r = 2.8v
mcp1700 ds21826a-page 10 ? 2003 microchip technology inc. 3.0 mcp1700 pin descriptions the descriptions of the pins are listed in table 3-1. table 3-1: mcp1700 pin function table 3.1 ground terminal (gnd) regulator ground. tie gnd to the negative side of the output and the negative side of the input capacitor. only the ldo bias current (1.6 a typical) flows out of this pin; there is no high current. the ldo output regulation is referenced to this pin. minimize voltage drops between this pin and the negative side of the load. 3.2 regulated output voltage (v out ) connect v out to the positive side of the load and the positive terminal of the output capacitor. the positive side of the output capacitor should be physically located as close to the ldo v out pin as is practical. the current flowing out of this pin is equal to the dc load current. 3.3 unregulated input voltage pin (v in ) connect v in to the input unregulated source voltage. like all low dropout linear regulators, low source impedance is necessary for the stable operation of the ldo. the amount of capacitance required to ensure low source impedance will depend on the proximity of the input source capacitors or battery type. for most applications, 1 f of capacitance will ensure stable operation of the ldo circuit. for applications that have load currents below 100 ma, the input capacitance requirement can be lowered. the type of capacitor used can be ceramic, tantalum or aluminum electro- lytic. the low esr characteristics of the ceramic will yield better noise and psrr performance at high- frequency. pin no. sot23-a pin no. sot89 pin no. to-92 name function 1 1 1 gnd ground terminal 233v out regulated voltage output 322v in unregulated supply voltage
2003 microchip technology inc. ds21826a-page 11 mcp1700 4.0 detailed description 4.1 output regulation a portion of the ldo output voltage is fed back to the internal error amplifier and compared with the precision internal bandgap reference. the error amplifier output will adjust the amount of current that flows through the p-channel pass transistor, thus regulating the output voltage to the desired value. any changes in input voltage or output current will cause the error amplifier to respond and adjust the output voltage to the target voltage (refer to figure 4-1). 4.2 overcurrent the mcp1700 internal circuitry monitors the amount of current flowing through the p-channel pass transistor. in the event of a short-circuit or excessive output current, the mcp1700 will turn off the p-channel device for a short period, after which the ldo will attempt to restart. if the excessive current remains, the cycle will repeat itself. 4.3 o vertemperature the internal power dissipation within the ldo is a function of input-to-output voltage differential and load current. if the power dissipation within the ldo is excessive, the internal junction temperature will rise above the typical shutdown threshold of 140c. at that point, the ldo will shut down and begin to cool to the typical turn-on junction temperature of 130c. if the power dissipation is low enough, the device will continue to cool and operate normally. if the power dissipation remains high, the thermal shutdown protection circuitry will again turn off the ldo, protecting it from catastrophic failure. figure 4-1: block diagram. + - mcp1700 v in v out gnd +v in error amplifier voltage reference overcurrent overtemperature
mcp1700 ds21826a-page 12 ? 2003 microchip technology inc. 5.0 functional description the mcp1700 cmos low dropout linear regulator is intended for applications that need the lowest current consumption while maintaining output voltage regulation. the operating continuous load range of the mcp1700 is from 0 ma to 250 ma (v r 2.5v). the input operating voltage range is from 2.3v to 6.0v, making it capable of operating from two, three or four alkaline cells or a single li-ion cell battery input. 5.1 input the input of the mcp1700 is connected to the source of the p-channel pmos pass transistor. as with all ldo circuits, a relatively low source impedance (10 ? ) is needed to prevent the input impedance from causing the ldo to become unstable. the size and type of the capacitor needed depends heavily on the input source type (battery, power supply) and the output current range of the application. for most applications (up to 100 ma), a 1 f ceramic capacitor will be sufficient to ensure circuit stability. larger values can be used to improve circuit ac performance. 5.2 output the maximum rated continuous output current for the mcp1700 is 250 ma (v r 2.5v). for applications where v r < 2.5v, the maximum output current is 200 ma. a minimum output capacitance of 1.0 f is required for small signal stability in applications that have up to 250 ma output current capability. the capacitor type can be ceramic, tantalum or aluminum electrolytic. the esr range on the output capacitor can range from 0 ? to 2.0 ? . 5.3 output rise time when powering up the internal reference output, the typical output rise time of 500 s is controlled to prevent overshoot of the output voltage.
? 2003 microchip technology inc. ds21826a-page 13 mcp1700 6.0 application circuits & issues 6.1 typical application the mcp1700 is most commonly used as a voltage regulator. it?s low quiescent current and low dropout voltage make it ideal for many battery-powered applications. figure 6-1: typical application circuit. 6.1.1 application input conditions 6.2 power calculations 6.2.1 power dissipation the internal power dissipation of the mcp1700 is a function of input voltage, output voltage and output current. the power dissipation, as a result of the quiescent current draw, is so low, it is insignificant (1.6 a x v in ). the following equation can be used to calculate the internal power dissipation of the ldo. equation the maximum continuous operating junction temperature specified for the mcp1700 is +125 c . to estimate the internal junction temperature of the mcp1700, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (r ja ). the thermal resistance from junction to ambient for the sot23 pin package is estimated at 230 c/w. equation the maximum power dissipation capability for a package can be calculated given the junction-to- ambient thermal resistance and the maximum ambient temperature for the application. the following equation can be used to determine the package maximum internal power dissipation. equation equation equation package type = sot23 input voltage range = 2.3v to 3.2v v in maximum = 3.2v v out typical = 1.8v i out = 150 ma maximum mcp1700 gnd v out v in c in 1f ceramic c out 1f ceramic v out v in (2.3v to 3.2v) 1.8v i out 150 ma p ldo v in max ) () v out min () ? () i out max ) () = p ldo = ldo pass device internal power dissipation v in(max) = maximum input voltage v out(min) = ldo minimum output voltage t jmax () p total r ja t amax + = t j(max) = maximum continuous junction temperature. p total = total device power dissipation. r ja = thermal resistance from junction to ambient. t amax = maximum ambient temperature. p dmax () t jmax () t amax () ? () r ja --------------------------------------------------- = p d(max) = maximum device power dissipation. t j(max) = maximum continuous junction temperature. t a(max) = maximum ambient temperature. r ja = thermal resistance from junction to ambient. t jrise () p dmax () r ja = t j(rise) = rise in device junction temperature over the ambient temperature. p total = maximum device power dissipation. r ja = thermal resistance from junction to ambient. t j t jrise () t a + = t j = junction temperature. t j(rise) = rise in device junction temperature over the ambient temperature. t a = ambient temperature.
mcp1700 ds21826a-page 14 ? 2003 microchip technology inc. 6.3 voltage regulator internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation are calculated in the following example. the power dissipation, as a result of ground current, is small enough to be neglected. 6.3.1 power dissipation example device junction temperature rise the internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction to ambient for the application. the thermal resistance from junction to ambient (r ja ) is derived from an eia/jedec standard for measuring thermal resistance for small surface mount packages. the eia/ jedec specification is jesd51-7, ?high effective thermal conductivity test board for leaded surface mount packages?. the standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. the actual thermal resistance for a particular application can vary depending on many factors, such as copper area and thickness. refer to an792, ?a method to determine how much power a sot23 can dissipate in an application?, (ds00792), for more information regarding this subject. junction temperature estimate to estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. for this example, the worst-case junction temperature is estimated below. maximum package power dissipation at +40c ambient temperature 6.4 voltage reference the mcp1700 can be used not only as a regulator, but also as a low quiescent current voltage reference. in many microcontroller applications, the initial accuracy of the reference can be calibrated using production test equipment or by using a ratio measurement. when the initial accuracy is calibrated, the thermal stability and line regulation tolerance are the only errors introduced by the mcp1700 ldo. the low cost, low quiescent current and small ceramic output capacitor are all advantages when using the mcp1700 as a voltage reference. figure 6-2: using the mcp1700 as a voltage reference. 6.5 pulsed load applications for some applications, there are pulsed load current events that may exceed the specified 250 ma maximum specification of the mcp1700. the internal current limit of the mcp1700 will prevent high peak load demands from causing non-recoverable damage. the 250 ma rating is a maximum average continuous rating. as long as the average current does not exceed 250 ma, pulsed higher load currents can be applied to the mcp1700 . the typical current limit for the mcp1700 is 550 ma (t a +25c). package package type = sot23 input voltage v in = 2.3v to 3.2v ldo output voltages and currents v out = 1.8v i out = 150 ma maximum ambient temperature t a(max) =+40c internal power dissipation internal power dissipation is the product of the ldo output current times the voltage across the ldo (v in to v out ). p ldo(max) =(v in(max) - v out(min) ) x i out(max) p ldo = (3.2v - (0.97 x 1.8v)) x 150 ma p ldo = 218.1 milli-watts t j(rise) =p total x rq ja t jrise = 218.1 milli-watts x 230.0 c/watt t jrise = 50.2 c t j =t jrise + t a(max) t j = 90.2c sot23 (230.0c/watt = r ja ) p d(max) = (125c - 40c) / 230c/w p d(max) = 369.6 milli-watts sot89 (52c/watt = r ja ) p d(max) = (125c - 40c) / 52c/w p d(max) = 1.635 watts to92 (131.9c/watt = r ja ) p d(max) = (125c - 40c) / 131.9c/w p d(max) = 644 milli-watts picmicro ? mcp1700 gnd v in c in 1f c out 1f bridge sensor v out v ref ado ad1 ratio metric reference 1 a bias microcontroller
? 2003 microchip technology inc. ds21826a-page 15 mcp1700 7.0 packaging information 7.1 package marking information 3-pin sot-23a cknn 3-pin sot-89 cuyyww nnn 3-pin to-92 xxxxxx xxxxxx ywwnnn standard extended temp symbol voltage * ck 1.2 cm 1.8 cp 2.5 cr 3.0 cs 3.3 cu 5.0 legend: xx...x customer specific information* y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * standard device marking consists of microchip part number, year code, week code, and traceability code. example: 1700 1202e 313256 * custom output voltages available upon request. contact your local microchip sales office for more information.
mcp1700 ds21826a-page 16 ? 2003 microchip technology inc. 3-lead plastic small outline transistor (tt) (sot-23) 10 5 0 10 5 0 mold draft angle bottom 10 5 0 10 5 0 mold draft angle top 0.51 0.44 0.37 .020 .017 .015 b lead width 0.18 0.14 0.09 .007 .006 .004 c lead thickness 10 5 0 10 5 0 foot angle 0.55 0.45 0.35 .022 .018 .014 l foot length 3.04 2.92 2.80 .120 .115 .110 d overall length 1.40 1.30 1.20 .055 .051 .047 e1 molded package width 2.64 2.37 2.10 .104 .093 .083 e overall width 0.10 0.06 0.01 .004 .002 .000 a1 standoff 1.02 0.95 0.88 .040 .037 .035 a2 molded package thickness 1.12 1.01 0.89 .044 .040 .035 a overall height 1.92 .076 p1 outside lead pitch (basic) 0.96 .038 p pitch 3 3 n number of pins max nom min max nom min dimension limits millimeters inches* units 2 1 p d b n e e1 l c a2 a a1 p1 * controlling parameter notes: dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed .010? (0.254mm) per side. jedec equivalent: to-236 drawing no. c04-104 significant characteristic
? 2003 microchip technology inc. ds21826a-page 17 mcp1700 3-lead plastic small outline transistor header (mb) (sot-89) 0.56 0.44 .022 .017 b lead 2 width 0.44 0.35 .017 .014 c lead thickness 1.83 1.62 .072 .064 d1 tab length 4.60 4.40 .181 .173 d overall length 2.29 2.13 .090 .084 e1 molded package width at top 4.25 3.94 .167 .155 h overall width 1.60 1.40 .063 .055 a overall height 3.00 bsc .118 bsc p1 outside lead pitch (basic) 1.50 bsc .059 bsc p pitch max min max min dimension limits millimeters* inches units exceed .005" (0.127mm) per side. dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not notes: jedec equivalent: to-243 drawing no. c04-29 *controlling parameter foot length l .035 .047 0.89 1.20 leads 1 & 3 width b1 .014 .019 0.36 0.48 molded package width at base e .090 .102 2.29 2.60 d1 h l b1 b b1 p p1 e c a d 1 2 3 e1
mcp1700 ds21826a-page 18 ? 2003 microchip technology inc. 3-lead plastic transistor outline (to) (to-92) 4 3 2 4 3 2 mold draft angle bottom 6 5 4 6 5 4 0.56 0.48 0.41 .022 .019 .016 b lead width 0.51 0.43 0.36 .020 .017 .014 c lead thickness 2.41 2.29 2.16 .095 .090 .085 r molded package radius 4.95 4.64 4.32 .195 .183 .170 d overall length 4.95 4.71 4.45 .195 .186 .175 e1 overall width 3.94 3.62 3.30 .155 .143 .130 a bottom to package flat 1.27 .050 p pitch 3 3 n number of pins max nom min max nom min dimension limits millimeters inches* units r n 1 3 p l b a c 1 d 2 e1 tip to seating plane l .500 .555 .610 12.70 14.10 15.49 *controlling parameter mold draft angle top notes: dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed .010? (0.254mm) per side. jedec equivalent: to-92 drawing no. c04-101
? 2003 microchip technology inc. ds21826a-page 19 mcp1700 product identification system to order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office . sales and support device: mcp1700: low quiescent current ldo tape and reel: tape and reel only applies to sot-23 and sot-89 devices standard output voltage: * 120 = 1.2v 180 = 1.8v 250 = 2.5v 300 = 3.0v 330 = 3.3v 500 = 5.0v * custom output voltages available upon request. contact your local microchip sales office for more information tolerance: 2 = 2% temperature range: e = -40c to +125c (extended) package: to = 3-lead to-92 mb = 3-lead sot89 tt = 3-lead sot23 examples: to-92 package: a) mcp1700-1202e/to: 1.2v v out b) mcp1700-1802e/to: 1.8v v out c) mcp1700-2502e/to: 2.5v v out d) mcp1700-3002e/to: 3.0v v out e) MCP1700-3302E/to: 3.3v v out f) mcp1700-5002e/to: 5.0v v out sot89 package: a) mcp1700t-1202e/mb: 1.2v v out b) mcp1700t-1802e/mb: 1.8v v out c) mcp1700t-2502e/mb: 2.5v v out d) mcp1700t-3002e/mb: 3.0v v out e) mcp1700t-3302e/mb: 3.3v v out f) mcp1700t-5002e/mb: 5.0v v out sot23 package: a) mcp1700t-1202e/tt: 1.2v v out b) mcp1700t-1802e/tt: 1.8v v out c) mcp1700t-2502e/tt: 2.5v v out d) mcp1700t-3002e/tt: 3.0v v out e) mcp1700t-3302e/tt: 3.3v v out f) mcp1700t-5002e/tt: 5.0v v out part no. x- xxx voltage tape & reel mcp1700 x tolerance x temp. range xx package output data sheets products supported by a preliminary data sheet may have an errata sheet describing minor operational differences and recommended workarounds. to determine if an errata sheet exists for a particular device, please contact one of the following: 1. your local microchip sales office 2. the microchip corporate literature center u.s. fax: (480) 792-7277 3. the microchip worldwide site (www.microchip.com) please specify which device, revision of silicon and data sheet (include literature #) you are using. customer notification system register on our web site (www.microchip.com/cn) to receive the most current information on our products.
mcp1700 ds21826a-page 20 ? 2003 microchip technology inc. notes:
? 2003 microchip technology inc. ds21826a-page 21 information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. no representation or warranty is given and no liability is assumed by microchip technology incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. use of microchip?s products as critical components in life support systems is not authorized except with express written approval by microchip. no licenses are conveyed, implicitly or otherwise, under any intellectual property rights. trademarks the microchip name and logo, the microchip logo, accuron, dspic, k ee l oq , mplab, pic, picmicro, picstart, pro mate and powersmart are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. amplab, filterlab, micro id , mxdev, mxlab, picmaster, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. application maestro, dspicdem, dspicdem.net, ecan, economonitor, fansense, flexrom, fuzzylab, in-circuit serial programming, icsp, icepic, microport, migratable memory, mpasm, mplib, mplink, mpsim, pickit, picdem, picdem.net, powercal, powerinfo, powermate, powertool, rflab, rfpic, select mode, smartsensor, smartshunt, smarttel and total endurance are trademarks of microchip technology incorporated in the u.s.a. and other countries. serialized quick turn programming (sqtp) is a service mark of microchip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2003, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. note the following details of the code protection feature on microchip devices: ? microchip products meet the specification contained in their particular microchip data sheet. ? microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip products in a manner outside the operating specifications contained in microchip's data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconductor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are committed to continuously improving the code protection features of our products. attempts to break microchip?s code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received qs-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona in july 1999 and mountain view, california in march 2002. the company?s quality system processes and procedures are qs-9000 compliant for its picmicro ? 8-bit mcus, k ee l oq ? code hopping devices, serial eeproms, microperipherals, non-volatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001 certified.
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